以下の論文がIEEE Transactions on Power Electronics (TPEL)へ採録されました．
- Michihiro Shintani, Yohei Nakamura, Kazuki Oishi, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
“Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation,” IEEE Transactions on Power Electronics, (to appear).