以下の論文が国際会議WiPDA (the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications)に採択されました。
- Michihiro Shintani, Kazuki Oishi, Rui Zhou, Masayuki Hiromoto, and Takashi Sato:
“A Circuit Simulation Model for V-Groove SiC Power MOSFET,” in Proc. of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (Fayetteville, AR, USA), Nov. 2016 (to appear). - Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
“Identifications of Thermal Equivalent Circuit for Power MOSFETs through In-Situ Channel Temperature Estimation,” in Proc. of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (Fayetteville, AR, USA), Nov. 2016 (to appear).