WiPDA2016採択決定

以下の論文が国際会議WiPDA (the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications)に採択されました。

  • Michihiro Shintani, Kazuki Oishi, Rui Zhou, Masayuki Hiromoto, and Takashi Sato:
    “A Circuit Simulation Model for V-Groove SiC Power MOSFET,” in Proc. of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (Fayetteville, AR, USA), Nov. 2016 (to appear).
  • Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
    “Identifications of Thermal Equivalent Circuit for Power MOSFETs through In-Situ Channel Temperature Estimation,” in Proc. of the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (Fayetteville, AR, USA), Nov. 2016 (to appear).
カテゴリー: Conference/Workshop, Publication タグ: パーマリンク