The following paper has been accepted for publication in the journal IEEE Transactions on Semiconductor Manufacturing.
Organic thin-film transistors (OTFTs) have advantages such as low cost manufacturing on flexible substrates. Meanwhile, it is known that their characteristics are degraded when they are exposed to ambient air. It is therefore important to estimate the environmental degradation when designing circuits using OTFTs. In this study, we proposed a current model that takes environmental degradation into account, inspired by the degradation model of negative bias temperature instability, which is one of the degradation mechanisms in silicon MOSFETs. By comparing the results with measurements of fabricated devices, it was shown that the proposed model can represent the characteristic degradation more accurately than existing models. In addition, from the measurement of a ring oscillator, it was shown that the proposed model can be used to analyze the degradation of circuit characteristics.
- Michihiro Shintani, Michiaki Saito, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Measurement and Modeling of Ambient-air-induced Degradation in Organic Thin-Film Transistor,” IEEE Transactions on Semiconductor Manufacturing (to appear).
DOI: 10.1109/TSM.2020.2986609