The paper below has been accepted for presentation in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). This is a joint work with laboratory of Advanced Electrical Systems Theory, Department of Electrical Engineering at Kyoto University.
- Yohei Nakamura, Michihiro Shintani, Kazuki Oishi, Takashi Sato, and Takashi Hikihara:
“A Simulation Model for SiC Power MOSFET Based on Surface Potentiantial,” in Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (Nuremberg, Germany), Sep. 2016 (to appear).