以下の論文が国際会議 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)に採択されました．なお本論文は工学研究科電気工学専攻 引原研究室との共同研究の成果によるものです．
- Yohei Nakamura, Michihiro Shintani, Kazuki Oishi, Takashi Sato, and Takashi Hikihara:
“A Simulation Model for SiC Power MOSFET Based on Surface Potentiantial,” in Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (Nuremberg, Germany), Sep. 2016 (to appear).