以下の論文が国際会議WiPDA (the 7th IEEE Workshop on Wide Bandgap Power Devices and Applications)に採択されることが決まりました。
- Michihiro Shintani, Hiroki Tsukamoto, and Takashi Sato, “Parameter extraction procedure for surface-potential-based SiC MOSFET model,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), October 2019. (accepted)