Dr. Shintani presented his paper at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) held in Nuremberg, Germany.
SISPAD has provided an international forum for the presentation of leading-edge research and development results in the area of process and device simulation for 20 years. Recently, works related wide bandgap power devices, such as SiC, have been included in SISPAD. Dr. Shintani’s talk was about a SiC power MOSFET model for circuit simulations. The proposed model is based on physical behavior of the SiC MOSFET and thus can successfully predict the circuit performance that utilizes SiC power MOSFET. With fruitful discussion with prominent researchers during the conference, it was an excellent opportunity to exchange ideas for future research plans.
This work is a collaborative research with Takashi Hikihara Laboratory, Department of Electrical Engineering, Kyoto University.
- Yohei Nakamura, Michihiro Shintani, Kazuki Oishi, Takashi Sato, and Takashi Hikihara:
“A Simulation Model for SiC Power MOSFET Based on Surface Potentiantial,” in Proc. of International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (Nuremberg, Germany), pp.121-124, Sep. 2016.
