A paper has been just published in the November issue of IEEE Transactions on Electron Devices.
J.B. Velamala, K.B. Sutaria, H. Shimizu, H. Awano, T. Sato, G. Wirth, and Y. Cao, “Compact Modeling of Statistical BTI Under Trapping/Detrapping,” IEEE Transactions on Electron Devices, vol.60, no.11, pp.3645-3654, Nov. 2013. (doi: 10.1109/TED.2013.2281986)
This paper proposes a new device model for aging simulations for circuits. A statistical compact model for BTI (Bias temperature instability) is presented, and it is validated with 65-nm silicon data. Using the proposed model, reliability design of electronic systems will be enhanced, promoting to realize a safe society.
This work was jointly conducted with Arizona State University and Universidade Federal do Rio Grande do Sul.