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August 2022 M T W T F S S « Jul 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Archives
Tag Archives: reliability
Paper accepted: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
The following paper has been accepted for publication in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD). This paper is a summary of the research results developed by a former student of our laboratory, who further extended … Continue reading
Posted in Publication
Tagged device aging, IEEE, Journal, lifetime estimation, Monte Carlo simulation, reliability
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Paper accepted for presentation in SISPAD 2021
The following two papers have been accepted for presentation at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2021. Kyohei Shimozato, Yohei Nakamura, and Takashi Sato, “Analysis of thermal concentration failure in unclamped inductive switching based on … Continue reading
Posted in Conference/Workshop
Tagged device model, electro-thermal simulation, power device, reliability, statistical simulation
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Paper accepted for publication in Japanese Journal of Applied Physics
We are pleased to announce that the following two papers have been accepted for publication in Japanese Journal of Applied Physics (JJAP). Oshima’s paper is a joint work with AIST. Kyohei Shimozato, Yohei Nakamura, Song Bian, and Takashi Sato, “An … Continue reading
Posted in Publication
Tagged compact model, Journal, JSAP, organic circuit, power device, reliability
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SSDM2020
Shimosato (M1), Qin (D1), and Oshima (M2) presented their papers at SSDM2020 (International Conference on Solid State Devices and Materials 2020) held on September 27-30, 2020 (Qin on 29th, Oshima on 29th, Shimosato on 30th). Shimosato’s presentation was about the … Continue reading
Posted in Conference/Workshop
Tagged JSAP, MOSFET model, organic, power electronics, reliability, SSDM
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Japanese Journal of Applied Physics: paper accepted
The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This work was done in collaboration with AIST. Kunihiro Oshima, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Recovery-aware bias-stress degradation model for organic … Continue reading
Posted in Publication
Tagged device model, Journal, JSAP, organic, reliability
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SASIMI2019
Posted in Conference/Workshop
Tagged novel computation, reliability, SASIMI, security
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SSDM 2019: paper accepted
The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading
Posted in Conference/Workshop
Tagged device model, JSAP, organic, reliability, SSDM
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ICMTS2019
Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading
Posted in Conference/Workshop
Tagged device model, ICMTS, IEEE, organic, power electronics, reliability
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(日本語) 2018年 電子情報通信学会 ソサイエティ大会
Posted in Conference/Workshop, Publication
Tagged IEICE, puf, reliability, security
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