Tag Archives: power electronics

Journal paper accepted for JJAP

Posted on Friday January 14th, 2022 by ts

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This is a joint work with Rohm Co. Ltd. Yohei Nakamura, Naotaka Kuroda, Ken Nakahara, Michihiro Shintani, and Takashi Sato, “Evaluation of thermal couple impedance … Continue reading →

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Paper accepted: APEC2022

Posted on Friday January 7th, 2022 by ts

Sorry, this entry is only available in 日本語.

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A paper accepted for presentation in ECCE 2021

Posted on Thursday May 13th, 2021 by ts

The following paper has been accepted for the ECCE2021 (IEEE The Thirteenth Annual Energy Conversion Congress and Exposition 2021), an international conference on power electronics to be held in October 2021. Yohei Nakamura, Michihiro Shintani and Takashi Sato, “Dominant Model … Continue reading →

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SSDM2020

Posted on Thursday October 29th, 2020 by ts

Shimosato (M1), Qin (D1), and Oshima (M2) presented their papers at SSDM2020 (International Conference on Solid State Devices and Materials 2020) held on September 27-30, 2020 (Qin on 29th, Oshima on 29th, Shimosato on 30th). Shimosato’s presentation was about the … Continue reading →

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WiPDA2020

Posted on Tuesday October 27th, 2020 by ts

Shimosato, M1, presented his research in The IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) held as an online conference on September 23-25, 2020 (Presentation date: September 24). SiC MOSFETs are expected to be the next … Continue reading →

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on Wednesday February 26th, 2020 by ts

The following paper has been accepted for publication in IEEE Transactions on Semiconductor Manufacturing. Power MOSFETs play an important role in power converters as high-performance switching devices. Variation-aware circuit simulation is now considered indispensable to improve the reliability of such … Continue reading →

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ICSCRM2019

Posted on Tuesday October 8th, 2019 by ts
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A paper accepted for presentation in WiPDA2019

Posted on Monday September 2nd, 2019 by ts

The following paper has been accepted for presentation at WiPDA (the 7th IEEE Workshop on Wide Bandgap Power Devices and Applications). Michihiro Shintani, Hiroki Tsukamoto, and Takashi Sato, “Parameter extraction procedure for surface-potential-based SiC MOSFET model,” in Proc. IEEE Workshop … Continue reading →

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A paper accepted for ICSCRM2019 in Kyoto

Posted on Tuesday July 16th, 2019 by ts

The following paper has been accepted as an oral presentation in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019. Michihiro Shintani, Kazuki Oishi, and Takashi Sato, “A three-level active gate drive circuit for power MOSFETs utilizing a generic … Continue reading →

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ICMTS2019

Posted on Tuesday April 2nd, 2019 by ts

Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading →

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