Tag Archives: power device

Paper accepted: EPE2022

Posted on Wednesday May 25th, 2022 by ts

The following paper has been accepted for presentation at the EPE 2022 ECCE Europe conference (EPE) 2022, an international conference related to power electronics to be held in September 2022. This is the result of joint research with Nara Institute … Continue reading →

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Paper accepted for presentation in IRPS2022

Posted on Thursday February 3rd, 2022 by ts

The following paper has been accepted for presentation in IRPS2022 (IEEE International Reliability Physics Symposium 2022)． Masato Shiozaki and Takashi Sato, “Characteristic degradation of power MOSFETs by X-ray irradiation and its recovery,” in Proc. IEEE International Reliability Physics Symposium (IRPS), … Continue reading →

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Paper accepted for presentation in SISPAD 2021

Posted on Wednesday June 23rd, 2021 by ts

The following two papers have been accepted for presentation at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2021. Kyohei Shimozato, Yohei Nakamura, and Takashi Sato, “Analysis of thermal concentration failure in unclamped inductive switching based on … Continue reading →

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Paper accepted for publication in Japanese Journal of Applied Physics

Posted on Friday January 22nd, 2021 by ts

We are pleased to announce that the following two papers have been accepted for publication in Japanese Journal of Applied Physics (JJAP). Oshima’s paper is a joint work with AIST. Kyohei Shimozato, Yohei Nakamura, Song Bian, and Takashi Sato, “An … Continue reading →

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