Tag Archives: JSAP

Paper accepted for publication in Japanese Journal of Applied Physics

Posted on Friday January 22nd, 2021 by ts

We are pleased to announce that the following two papers have been accepted for publication in Japanese Journal of Applied Physics (JJAP). Oshima’s paper is a joint work with AIST. Kyohei Shimozato, Yohei Nakamura, Song Bian, and Takashi Sato, “An … Continue reading →

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Paper accepted for publication in Japanese Journal of Applied Physics

Posted on Thursday January 14th, 2021 by ts

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This work has been done in collaboration with AIST. Zhaoxing Qin, Song Bian, Kazunori Kuribara and Takashi Sato: “Stable organic SRAM cell with p-type access … Continue reading →

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SSDM2020

Posted on Thursday October 29th, 2020 by ts

Shimosato (M1), Qin (D1), and Oshima (M2) presented their papers at SSDM2020 (International Conference on Solid State Devices and Materials 2020) held on September 27-30, 2020 (Qin on 29th, Oshima on 29th, Shimosato on 30th). Shimosato’s presentation was about the … Continue reading →

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Japanese Journal of Applied Physics: paper accepted

Posted on Friday December 6th, 2019 by ts

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This work was done in collaboration with AIST. Kunihiro Oshima, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Recovery-aware bias-stress degradation model for organic … Continue reading →

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SSDM 2019: paper accepted

Posted on Thursday June 27th, 2019 by ts

The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading →

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Paper Published on Japanese Journal of Applied Physics (JJAP)

Posted on Friday March 2nd, 2018 by ts

Sorry, this entry is only available in 日本語.

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(日本語) SSDM2017

Posted on Friday September 22nd, 2017 by ts

Sorry, this entry is only available in 日本語.

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SSDM 2017: paper accepted

Posted on Friday July 14th, 2017 by hiromoto

The following paper has been accepted for oral presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 19-22, 2017. Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, Masayuki Hiromoto, and Takashi Sato: “A Design-Analysis … Continue reading →

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SSDM2016

Posted on Monday October 3rd, 2016 by hiromoto

Dr. Shintani presented his paper at International Conference on Solid State Devices and Materials (SSDM) held in Tsukuba, Japan. Dr. Shintani’s talk was about a circuit simulation model for SiC power MOSFET. Circuit simulation models standarized in the industry assume … Continue reading →

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SSDM 2016: paper accepted

Posted on Tuesday July 19th, 2016 by hiromoto

The following paper has been accepted for presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 26-29, 2016. Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “A Surface-Potential-Based Reverse-Transfer … Continue reading →

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