Tag Archives: device model

(日本語) ICMTS2022 採録決定

Posted on 02/21/22 Monday by ts

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(日本語) Japanese Journal of Applied Physicsへの論文採録決定

Posted on 01/14/22 Friday by ts

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(日本語) 統計的回路シミュレーションに関する招待講演

Posted on 11/12/21 Friday by ts

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Paper accepted: IEEE Transactions on Power Electronics

Posted on 10/04/21 Monday by ts

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(日本語) SISPAD 2021採録決定

Posted on 06/23/21 Wednesday by ts

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A paper accepted for presentation in ECCE 2021

Posted on 05/13/21 Thursday by ts

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IEEE Kansai Chapter MFSK Award

Posted on 12/03/20 Thursday by ts
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WiPDA2020

Posted on 10/27/20 Tuesday by ts
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IEEE Transactions on Semiconductor Manufacturing: paper accepted

Posted on 04/15/20 Wednesday by ts

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on 02/26/20 Wednesday by ts

Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300

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