Tag Archives: device model

Two papers accepted for presentation in ICMTS 2022

Posted on Monday February 21st, 2022 by ts

The following two papers have been accepted for presentation at the 34th IEEE International Conference on Microelectronic Test Structures (ICMTS) 2022. Kyohei Shimozato and Takashi Sato, “dGPLVM: A nonparametric device model for statistical circuit simulation,” in Proc. IEEE International Conference … Continue reading →

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Journal paper accepted for JJAP

Posted on Friday January 14th, 2022 by ts

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This is a joint work with Rohm Co. Ltd. Yohei Nakamura, Naotaka Kuroda, Ken Nakahara, Michihiro Shintani, and Takashi Sato, “Evaluation of thermal couple impedance … Continue reading →

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Invited talk on statistical circuit simulation

Posted on Friday November 12th, 2021 by ts

On November 11 and 12, 2021, Prof. Sato gave the following invited talk on statistical circuit simulation at a workshop jointly organized by the Silicon Materials and Devices (SDM) Society of the Institute of Electronics, Information and Communication Engineers (IEICE) … Continue reading →

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Paper accepted: IEEE Transactions on Power Electronics

Posted on Monday October 4th, 2021 by ts

The following paper has been accepted for publication in IEEE Transactions on Power Electronics (TPEL). Michihiro Shintani, Aoi Ueda, and Takashi Sato, “Accelerating Parameter Extraction of Power MOSFET Models Using Automatic Differentiation,” IEEE Transactions on Power Electronics (TPEL), (accepted for … Continue reading →

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Paper accepted for presentation in SISPAD 2021

Posted on Wednesday June 23rd, 2021 by ts

The following two papers have been accepted for presentation at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2021. Kyohei Shimozato, Yohei Nakamura, and Takashi Sato, “Analysis of thermal concentration failure in unclamped inductive switching based on … Continue reading →

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A paper accepted for presentation in ECCE 2021

Posted on Thursday May 13th, 2021 by ts

The following paper has been accepted for the ECCE2021 (IEEE The Thirteenth Annual Energy Conversion Congress and Exposition 2021), an international conference on power electronics to be held in October 2021. Yohei Nakamura, Michihiro Shintani and Takashi Sato, “Dominant Model … Continue reading →

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IEEE Kansai Chapter MFSK Award

Posted on Thursday December 3rd, 2020 by ts

Oshima (M2) received the IEEE Kansai Chapter MFSK Award at the 20th IEEE Kansai Colloquium on Electronic Devices held online on November 27. The awarded presentation is as follows. Experimental study of bias stress degradation of organic thin filmtransistors [SSDM], … Continue reading →

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WiPDA2020

Posted on Tuesday October 27th, 2020 by ts

Shimosato, M1, presented his research in The IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) held as an online conference on September 23-25, 2020 (Presentation date: September 24). SiC MOSFETs are expected to be the next … Continue reading →

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IEEE Transactions on Semiconductor Manufacturing: paper accepted

Posted on Wednesday April 15th, 2020 by ts

The following paper has been accepted for publication in the journal IEEE Transactions on Semiconductor Manufacturing. Organic thin-film transistors (OTFTs) have advantages such as low cost manufacturing on flexible substrates. Meanwhile, it is known that their characteristics are degraded when … Continue reading →

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on Wednesday February 26th, 2020 by ts

The following paper has been accepted for publication in IEEE Transactions on Semiconductor Manufacturing. Power MOSFETs play an important role in power converters as high-performance switching devices. Variation-aware circuit simulation is now considered indispensable to improve the reliability of such … Continue reading →

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