Paper accepted for publication in Japanese Journal of Applied Physics

We are pleased to announce that the following two papers have been accepted for publication in Japanese Journal of Applied Physics (JJAP).
Oshima’s paper is a joint work with AIST.

  • Kyohei Shimozato, Yohei Nakamura, Song Bian, and Takashi Sato, “An electrothermal compact model of SiC MOSFETs for analyzing avalanche failure mechanism,” Japanese Journal of Applied Physics (JJAP), (to appear) doi: 10.35848/1347-4065/abdc5c .
  • Kunihiro Oshima, Song Bian, Kazunori Kuribara, and Takashi Sato, “Separation of bias stress degradation factors in organic thin-film transistors,” Japanese Journal of Applied Physics (JJAP), (to appear) doi: 10.35848/1347-4065/abdcb2 .
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