Shimosato, M1, presented his research in The IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) held as an online conference on September 23-25, 2020 (Presentation date: September 24).
SiC MOSFETs are expected to be the next generation devices for power converters in electric vehicles and trains because of their excellent properties. SiC MOSFETs are used as switches in circuits. During switching, they pass through an operating point with high voltage and high power, causing self-heating, which can lead to characteristic degradation or breakdown. Normally, we design the circuits so that such problems will not occur, but depending on the circuit and operating conditions, they sometimes happen.
In this study, we proposed a simulation model that can be used over a wide range of temperatures, which is necessary for simulating circuits under such severe conditions. The two physical phenomena that are responsible for the temperature dependence are separated and formulated as simple equations. In addition, the current characteristic measurements, which have been limited to about 200°C in existing studies, were carried out up to temperatures above 300°C. It was shown that the proposed model fits well with the measurement results. We confirmed the effectiveness of the proposed model by demonstrating that the errors are smaller than those of the existing models in all measured temperature ranges.
- Kohei Shimozato and Takashi Sato, “A Compact device model for SiC MOSFETs valid for wide-temperature range,” in Proc. IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia), pp.56-60, September 2020.
