The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP).
This work was done in collaboration with AIST.
- Kunihiro Oshima, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Recovery-aware bias-stress degradation model for organic thin-film transistors considering drain and gate bias voltages,” Japanese Journal of Applied Physics (JJAP), (accepted for publication).