The following paper has been accepted as an oral presentation in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019.
- Michihiro Shintani, Kazuki Oishi, and Takashi Sato, “A three-level active gate drive circuit for power MOSFETs utilizing a generic gate driver IC,” in Proc. International Conference on Silicon Carbide and Related Materials (ICSCRM), (to appear)