The following paper has been accepted for publication in Nonlinear Theory and Its Applications, IEICE.
- Rui Zhou, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
“Modeling of Interelectrode Parasitic Elements of V-Groove SiC MOSFET,” Nonlinear Theory and Its Applications, IEICE, (to appear).