Mr. Oishi presented his paper at International Conference on Microelectronic Test Structures (ICMTS) 2017 held in Grenoble, France.
Mr. Oishi’s talk was about input capacitance measurement of power MOSFETs. The modeling of the input capacitance is crucial for the simulation of power converters. However, conventional methods could not measure the capacitance accurately when the channel of MOSFET is formed. In this paper, we propose a novel method for determining the input capacitance using switching waveforms. The proposed method enables the capacitance measurement even when the channel is formed. The experimental results show that the capacitance model obtained by the proposed method simulates switching waveforms accurately and reduces timing errors by more than 16 times when compared to the conventional model.
- Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
“Input Capacitance Determination of Power MOSFETs from Switching Trajectories,” in Proc. of International Conference on Microelectronic Test Structures (ICMTS), pp.87-92, Mar. 2017.