Japanese Journal of Applied Physics (JJAP)への以下の論文の採録が決定しました．
- Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
“Measurement and Modeling on Gate-Drain Capacitance of Silicon Carbide Vertical MOSFET,” Japanese Journal of Applied Physics, Mar. 2017 (to appear).