Paper accepted for publication in Japanese Journal of Applied Physics

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP).

  • Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
    “Measurement and Modeling on Gate-Drain Capacitance of Silicon Carbide Vertical MOSFET,” Japanese Journal of Applied Physics, Mar. 2017 (to appear).
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