以下の論文が2016年9月26〜29日に開催予定の国際会議 International Conference on Solid State Devices and Materials (SSDM) に採択されました.
- Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
“A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET,” in Proc. of International Conference on Solid State Devices and Materials (SSDM) (Tsukuba, Japan), Sep. 2016 (to appear).