SSDM 2016: paper accepted

The following paper has been accepted for presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 26-29, 2016.

  • Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
    “A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET,” in Proc. of International Conference on Solid State Devices and Materials (SSDM) (Tsukuba, Japan), Sep. 2016 (to appear).
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