The following paper has been accepted for presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 26-29, 2016.
- Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
“A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET,” in Proc. of International Conference on Solid State Devices and Materials (SSDM) (Tsukuba, Japan), Sep. 2016 (to appear).