以下の論文が2016年11月27〜30日に開催予定の国際会議 International Symposium on Nonlinear Theory and Its Applications (NOLTA) に採択されました.
- Rui Zhou, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
“A Charge-Based SiC Power MOSFET Model Considering On-State Resistance,” in Proc. of International Symposium on Nonlinear Theory and Its Applications (NOLTA) (Yugawara, Japan), Nov. 2016 (to appear). - Michihiro Shintani, Yuchong Sun, Hiroo Sekiya, and Takashi Sato:
“A Design Example of Class-E Based Gate Driver for High Frequency Operation of SiC Power MOSFET,” in Proc. of International Symposium on Nonlinear Theory and Its Applications (NOLTA) (Yugawara, Japan), Nov. 2016 (to appear).