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Daily Archives: Tuesday October 27th, 2020
WiPDA2020
Shimosato, M1, presented his research in The IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) held as an online conference on September 23-25, 2020 (Presentation date: September 24). SiC MOSFETs are expected to be the next … Continue reading
Posted in Conference/Workshop
Tagged device model, high temperature, power electronics, SiC MOSFET
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