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Daily Archives: Monday September 2nd, 2019
A paper accepted for presentation in WiPDA2019
The following paper has been accepted for presentation at WiPDA (the 7th IEEE Workshop on Wide Bandgap Power Devices and Applications). Michihiro Shintani, Hiroki Tsukamoto, and Takashi Sato, “Parameter extraction procedure for surface-potential-based SiC MOSFET model,” in Proc. IEEE Workshop … Continue reading
Posted in Conference/Workshop
Tagged device model, IEEE, power electronics
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