Daily Archives: Monday December 19th, 2016

(日本語) 2016年度 忘年会

Posted on Monday December 19th, 2016 by hiromoto

Sorry, this entry is only available in 日本語.

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Paper accepted for publication in Japanese Journal of Applied Physics

Posted on Monday December 19th, 2016 by hiromoto

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “Measurement and Modeling on Gate-Drain Capacitance of Silicon Carbide Vertical MOSFET,” Japanese Journal of … Continue reading →

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