Monthly Archives: December 2016

(日本語) 第42回パルテノン研究会

Posted on Tuesday December 20th, 2016 by hiromoto

Sorry, this entry is only available in 日本語.

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(日本語) 2016年度 忘年会

Posted on Monday December 19th, 2016 by hiromoto

Sorry, this entry is only available in 日本語.

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Paper accepted for publication in Japanese Journal of Applied Physics

Posted on Monday December 19th, 2016 by hiromoto

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “Measurement and Modeling on Gate-Drain Capacitance of Silicon Carbide Vertical MOSFET,” Japanese Journal of … Continue reading →

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Student paper accepted for presentation in ISQED 2017

Posted on Tuesday December 6th, 2016 by hiromoto

The following paper has been accepted for presentation in ISQED 2017 (International Symposium on Quality Electronic Design). Shumpei Morita, Song Bian, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato: “Comparative Study of Path Selection and Objective Function in Replacing NBTI Mitigation Logic,” … Continue reading →

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Student paper accepted for presentation in ICMTS 2017

Posted on Monday December 5th, 2016 by hiromoto

The following paper has been accepted for presentation in ICMTS 2017 (International Conference on Microelectronic Test Structures). Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato: “Input Capacitance Determination of Power MOSFETs from Switching Trajectories,” in Proc. of International Conference … Continue reading →

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NOLTA 2016

Posted on Monday December 5th, 2016 by hiromoto

Dr. Shintani and Mr. Zhou presented their papers at International Symposium on Nonlinear Theory and Its Applications (NOLTA 2016) held in Yugawara, Japan. Dr. Shintani’s talk was on the gate driver without its switching loss. As switching frequency increases, the … Continue reading →

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