Monthly Archives: December 2016

(日本語) 第42回パルテノン研究会

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(日本語) 2016年度 忘年会

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Paper accepted for publication in Japanese Journal of Applied Physics

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “Measurement and Modeling on Gate-Drain Capacitance of Silicon Carbide Vertical MOSFET,” Japanese Journal of … Continue reading

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Student paper accepted for presentation in ISQED 2017

The following paper has been accepted for presentation in ISQED 2017 (International Symposium on Quality Electronic Design). Shumpei Morita, Song Bian, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato: “Comparative Study of Path Selection and Objective Function in Replacing NBTI Mitigation Logic,” … Continue reading

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Student paper accepted for presentation in ICMTS 2017

The following paper has been accepted for presentation in ICMTS 2017 (International Conference on Microelectronic Test Structures). Kazuki Oishi, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato: “Input Capacitance Determination of Power MOSFETs from Switching Trajectories,” in Proc. of International Conference … Continue reading

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NOLTA 2016

Dr. Shintani and Mr. Zhou presented their papers at International Symposium on Nonlinear Theory and Its Applications (NOLTA 2016) held in Yugawara, Japan. Dr. Shintani’s talk was on the gate driver without its switching loss. As switching frequency increases, the … Continue reading

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