SASIMI 2016 Outstanding Paper Award

Mr. Shumpei Morita was awarded “Outstanding Paper Award” for the following paper presented at SASIMI 2016 (The 20th Workshop on Synthesis And System Integration of
Mixed Information technologies).

  • Shumpei Morita, Song Bian, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
    “Path Grouping Approach for Efficient Candidate Selection of Replacing NBTI Mitigation Logic,” in Proc. of the 20th Workshop on Synthesis And System Integration of Mixed Information technologies (SASIMI2016) (Kyoto Research Park, Kyoto, Japan), pp.225-230, Oct. 2016.
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(日本語) SASIMI 2016

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Papers accepted for presentation in VMC 2016

The following papers have been accepted for presentation in VMC2016 (IEEE/ACM Workshop on Variability Modeling and Characterization).

  • Michihiro Shintani, Kazuki Oishi, Rui Zhou, Masayuki Hiromoto, and Takashi Sato:
    “Unique Device Identification Framework for Power MOSFETs Using Inherent Device Variation,” in Proc. of IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) (Austin, TX), Nov. 2016 (to appear).
  • Shumpei Morita, Song Bian, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
    “Representative Path Approach for Time-Efficient NBTI Mitigation Logic Replacement,” in Proc. of IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) (Austin, TX), Nov. 2016 (to appear).
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Welcome party for incoming student (Fall 2016)

On October 12, 2016, a new member of the lab, Benjamin Nicolas Dauphin, is welcomed at ‘Bouno’ restaurant located near Hyakumanben crossing.

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Paper accepted for presentation in APEC 2017

The following paper has been accepted for presentation in APEC2017 (the 32nd Annual IEEE Applied Power Electronics Conference & Exposition).

  • Michihiro Shintani, Kazuki Oishi, Rui Zhou, Masayuki Hiromoto, and Takashi Sato:
    “Device Identification from Mixture of Measurable Characteristics,” in Proc. of the 32nd Annual IEEE Applied Power Electronics Conference & Exposition (APEC) (Tampa, FL, USA), Mar. 2017 (to appear).
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SSDM2016

Dr. Shintani presented his paper at International Conference on Solid State Devices and Materials (SSDM) held in Tsukuba, Japan.

Dr. Shintani’s talk was about a circuit simulation model for SiC power MOSFET. Circuit simulation models standarized in the industry assume lateral MOSFET structure that has gate, drain, and source terminals on the topside. However, vertical MOSFET structure, whose drain terminal is on the bottom side, is widely used for high power applications. In this work, we proposed a circuit simulation model for vertical SiC power MOSFETs, and demonstrated the effectiveness of the model. This work is a collaborative research with Takashi Hikihara Laboratory, Department of Electrical Engineering, Kyoto University.

  • Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
    “A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET,” in Proc. of International Conference on Solid Devices and Materials (SSDM), PS-14-08, pp.993-994, Sep. 2016.
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(日本語) 2016年 電子情報通信学会 ソサイエティ大会(4日目)

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(日本語) 2016年 電子情報通信学会 ソサイエティ大会(3日目)

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(日本語) 2016年 電子情報通信学会 ソサイエティ大会(2日目)

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(日本語) 2016年 電子情報通信学会 ソサイエティ大会(1日目)

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