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May 2025 M T W T F S S « Apr 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Archives
Author Archives: ts
Oshima received the IEEE CEDA All Japan Joint Chapter Academic Research Award
Posted in Award
Tagged academic research award, CEDA, IEEE
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Paper accepted for publication in Japanese Journal of Applied Physics
We are pleased to announce that the following two papers have been accepted for publication in Japanese Journal of Applied Physics (JJAP). Oshima’s paper is a joint work with AIST. Kyohei Shimozato, Yohei Nakamura, Song Bian, and Takashi Sato, “An … Continue reading
Posted in Publication
Tagged compact model, Journal, JSAP, organic circuit, power device, reliability
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Paper accepted for publication in Japanese Journal of Applied Physics
The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This work has been done in collaboration with AIST. Zhaoxing Qin, Song Bian, Kazunori Kuribara and Takashi Sato: “Stable organic SRAM cell with p-type access … Continue reading
Posted in Publication
Tagged Journal, JSAP, organic circuit, SRAM
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IEEE Kansai Chapter MFSK Award
Oshima (M2) received the IEEE Kansai Chapter MFSK Award at the 20th IEEE Kansai Colloquium on Electronic Devices held online on November 27. The awarded presentation is as follows. Experimental study of bias stress degradation of organic thin filmtransistors [SSDM], … Continue reading
Posted in Award
Tagged device model, electron device society, IEEE, organic
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SSDM2020
Shimosato (M1), Qin (D1), and Oshima (M2) presented their papers at SSDM2020 (International Conference on Solid State Devices and Materials 2020) held on September 27-30, 2020 (Qin on 29th, Oshima on 29th, Shimosato on 30th). Shimosato’s presentation was about the … Continue reading
Posted in Conference/Workshop
Tagged JSAP, MOSFET model, organic, power electronics, reliability, SSDM
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WiPDA2020
Shimosato, M1, presented his research in The IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia) held as an online conference on September 23-25, 2020 (Presentation date: September 24). SiC MOSFETs are expected to be the next … Continue reading
Posted in Conference/Workshop
Tagged device model, high temperature, power electronics, SiC MOSFET
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Award: IPSJ Computer Science Research Award for Young Scientists
Mr. Oshima (M2) received the “Information Processing Society of Japan Computer Science Field Encouragement Award”. This award is given to a young researcher who has given an outstanding presentation at a meeting or a symposium of the computer science area … Continue reading
DAC2020
Dan, a graduate of our group presented his research at the 57th ACM/IEEE Design Automation Conference (DAC) 2020 held from July 20 to July 24, 2020 (presentation date: July 25). In addition to DAC being the top conference in integrated … Continue reading