Tag Archives: TPEL

Paper accepted for publication in IEEE Transactions on Power Electronics

Posted on Sunday February 4th, 2018 by hiromoto

The following paper has been accepted for publication in IEEE Transactions on Power Electronics (TPEL). Michihiro Shintani, Yohei Nakamura, Kazuki Oishi, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation,” IEEE Transactions on … Continue reading →

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