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- ▼2021 (2)
- ▼January (2)
- Japanese Journal of Applied Physicsへの論文採録決定Paper accepted for publication in Japanese Journal of Applied PhysicsPaper accepted for publication in Japanese Journal of Applied Physics
- Japanese Journal of Applied Physicsへの論文採録決定Paper accepted for publication in Japanese Journal of Applied PhysicsPaper accepted for publication in Japanese Journal of Applied Physics
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Tag Archives: power electronics
SSDM2020
Posted in Conference/Workshop
Tagged JSAP, MOSFET model, organic, power electronics, reliability, SSDM
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WiPDA2020
Posted in Conference/Workshop
Tagged device model, high temperature, power electronics, SiC MOSFET
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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing
Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300
Posted in Publication
Tagged device model, IEEE, Journal, power electronics
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A paper accepted for presentation in WiPDA2019
Sorry, this entry is only available in 日本語.
Posted in Conference/Workshop
Tagged device model, IEEE, power electronics
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A paper accepted for ICSCRM2019 in Kyoto
The following paper has been accepted as an oral presentation in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019. Michihiro Shintani, Kazuki Oishi, and Takashi Sato, “A three-level active gate drive circuit for power MOSFETs utilizing a generic … Continue reading
Posted in Conference/Workshop, Publication
Tagged power electronics
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ICMTS2019
Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading
Posted in Conference/Workshop
Tagged device model, ICMTS, IEEE, organic, power electronics, reliability
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ICSICT2018
Posted in Conference/Workshop, Publication
Tagged Invited, power electronics, puf
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(日本語) 英文論文誌Nonlinear Theory and Its Applications, IEICE (NOLTA)への論文掲載
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged device model, IEICE, Journal, power electronics
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IPEC2018
Sorry, this entry is only available in 日本語.