Tag Archives: power electronics

A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on Wednesday February 26th, 2020 by ts

Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300

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ICSCRM2019

Posted on Tuesday October 8th, 2019 by ts
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A paper accepted for presentation in WiPDA2019

Posted on Monday September 2nd, 2019 by ts

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A paper accepted for ICSCRM2019 in Kyoto

Posted on Tuesday July 16th, 2019 by ts

The following paper has been accepted as an oral presentation in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019. Michihiro Shintani, Kazuki Oishi, and Takashi Sato, “A three-level active gate drive circuit for power MOSFETs utilizing a generic … Continue reading →

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ICMTS2019

Posted on Tuesday April 2nd, 2019 by ts

Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading →

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ICSICT2018

Posted on Thursday November 15th, 2018 by ts
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(日本語) 英文論文誌Nonlinear Theory and Its Applications, IEICE (NOLTA)への論文掲載

Posted on Monday July 2nd, 2018 by ts

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IPEC2018

Posted on Wednesday June 13th, 2018 by ts

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