Tag Archives: JSAP

SSDM 2017: paper accepted

Posted on Friday July 14th, 2017 by hiromoto

The following paper has been accepted for oral presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 19-22, 2017. Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, Masayuki Hiromoto, and Takashi Sato: “A Design-Analysis … Continue reading →

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SSDM2016

Posted on Monday October 3rd, 2016 by hiromoto

Dr. Shintani presented his paper at International Conference on Solid State Devices and Materials (SSDM) held in Tsukuba, Japan. Dr. Shintani’s talk was about a circuit simulation model for SiC power MOSFET. Circuit simulation models standarized in the industry assume … Continue reading →

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SSDM 2016: paper accepted

Posted on Tuesday July 19th, 2016 by hiromoto

The following paper has been accepted for presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 26-29, 2016. Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “A Surface-Potential-Based Reverse-Transfer … Continue reading →

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