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- ▼2021 (2)
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- Japanese Journal of Applied Physicsへの論文採録決定Paper accepted for publication in Japanese Journal of Applied PhysicsPaper accepted for publication in Japanese Journal of Applied Physics
- Japanese Journal of Applied Physicsへの論文採録決定Paper accepted for publication in Japanese Journal of Applied PhysicsPaper accepted for publication in Japanese Journal of Applied Physics
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Tag Archives: JSAP
Paper accepted for publication in Japanese Journal of Applied Physics
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged compact model, Journal, JSAP, organic circuit, power device, reliability
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Paper accepted for publication in Japanese Journal of Applied Physics
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged Journal, JSAP, organic circuit, SRAM
Comments Off on Paper accepted for publication in Japanese Journal of Applied Physics
SSDM2020
Posted in Conference/Workshop
Tagged JSAP, MOSFET model, organic, power electronics, reliability, SSDM
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(日本語) Japanese Journal of Applied Physicsへの論文採録決定
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged device model, Journal, JSAP, organic, reliability
Comments Off on (日本語) Japanese Journal of Applied Physicsへの論文採録決定
SSDM 2019: paper accepted
The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading
Posted in Conference/Workshop
Tagged device model, JSAP, organic, reliability, SSDM
Comments Off on SSDM 2019: paper accepted
Paper Published on Japanese Journal of Applied Physics (JJAP)
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged JSAP, organic
Comments Off on Paper Published on Japanese Journal of Applied Physics (JJAP)
(日本語) SSDM2017
Sorry, this entry is only available in 日本語.
SSDM 2017: paper accepted
The following paper has been accepted for oral presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 19-22, 2017. Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, Masayuki Hiromoto, and Takashi Sato: “A Design-Analysis … Continue reading
SSDM2016
Dr. Shintani presented his paper at International Conference on Solid State Devices and Materials (SSDM) held in Tsukuba, Japan. Dr. Shintani’s talk was about a circuit simulation model for SiC power MOSFET. Circuit simulation models standarized in the industry assume … Continue reading
SSDM 2016: paper accepted
The following paper has been accepted for presentation in International Conference on Solid State Devices and Materials (SSDM), which will be held during September 26-29, 2016. Michihiro Shintani, Yohei Nakamura, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato: “A Surface-Potential-Based Reverse-Transfer … Continue reading