Tag Archives: device model

Japanese Journal of Applied Physics: paper accepted

Posted on Friday December 6th, 2019 by ts

The following paper has been accepted for publication in Japanese Journal of Applied Physics (JJAP). This work was done in collaboration with AIST. Kunihiro Oshima, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Recovery-aware bias-stress degradation model for organic … Continue reading →

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SSDM 2019

Posted on Friday September 6th, 2019 by ts
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A paper accepted for presentation in WiPDA2019

Posted on Monday September 2nd, 2019 by ts

The following paper has been accepted for presentation at WiPDA (the 7th IEEE Workshop on Wide Bandgap Power Devices and Applications). Michihiro Shintani, Hiroki Tsukamoto, and Takashi Sato, “Parameter extraction procedure for surface-potential-based SiC MOSFET model,” in Proc. IEEE Workshop … Continue reading →

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DA symposium 2019

Posted on Sunday September 1st, 2019 by ts
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SSDM 2019: paper accepted

Posted on Thursday June 27th, 2019 by ts

The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading →

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ICMTS2019

Posted on Tuesday April 2nd, 2019 by ts

Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading →

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(日本語) 英文論文誌Nonlinear Theory and Its Applications, IEICE (NOLTA)への論文掲載

Posted on Monday July 2nd, 2018 by ts

Sorry, this entry is only available in 日本語.

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IPEC2018

Posted on Wednesday June 13th, 2018 by ts

Sorry, this entry is only available in 日本語.

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