Tag Archives: device model

IEEE Trans. Semicond. Manufact.: paper accepted

Posted on 2020年04月15日 星期三 by ts

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on 2020年02月26日 星期三 by ts

Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300

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(日本語) Japanese Journal of Applied Physicsへの論文採録決定

Posted on 2019年12月06日 星期五 by ts

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SSDM 2019

Posted on 2019年09月06日 星期五 by ts
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A paper accepted for presentation in WiPDA2019

Posted on 2019年09月02日 星期一 by ts

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DA symposium 2019

Posted on 2019年09月01日 星期日 by ts
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(日本語) SSDM2019採択決定

Posted on 2019年06月27日 星期四 by ts

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(日本語) ICMTS2019

Posted on 2019年04月02日 星期二 by ts
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(日本語) 英文論文誌Nonlinear Theory and Its Applications, IEICE (NOLTA)への論文掲載

Posted on 2018年07月02日 星期一 by ts

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(日本語) IPEC2018

Posted on 2018年06月13日 星期三 by ts

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