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April 2021 M T W T F S S « Feb 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Archives
Tag Archives: device model
IEEE Kansai Chapter MFSK Award
Posted in Award
Tagged device model, electron device society, IEEE, organic
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WiPDA2020
Posted in Conference/Workshop
Tagged device model, high temperature, power electronics, SiC MOSFET
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IEEE Trans. Semicond. Manufact.: paper accepted
对不起,此内容只适用于日本語。
Posted in Publication
Tagged device model, IEEE, Journal, organic
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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing
Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300
Posted in Publication
Tagged device model, IEEE, Journal, power electronics
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(日本語) Japanese Journal of Applied Physicsへの論文採録決定
对不起,此内容只适用于日本語。
Posted in Publication
Tagged device model, Journal, JSAP, organic, reliability
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A paper accepted for presentation in WiPDA2019
对不起,此内容只适用于日本語。
Posted in Conference/Workshop
Tagged device model, IEEE, power electronics
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DA symposium 2019
Posted in Conference/Workshop
Tagged DAS, device model, IPSJ, organic
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(日本語) SSDM2019採択決定
对不起,此内容只适用于English和日本語。
Posted in Conference/Workshop
Tagged device model, JSAP, organic, reliability, SSDM
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(日本語) ICMTS2019
Posted in Conference/Workshop
Tagged device model, ICMTS, IEEE, organic, power electronics, reliability
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