Tag Archives: device model

IEEE Kansai Chapter MFSK Award

Posted on 12/03/20 Thursday by ts
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WiPDA2020

Posted on 10/27/20 Tuesday by ts
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IEEE Trans. Semicond. Manufact.: paper accepted

Posted on 04/15/20 Wednesday by ts

对不起，此内容只适用于日本語。

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on 02/26/20 Wednesday by ts

Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300

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(日本語) Japanese Journal of Applied Physicsへの論文採録決定

Posted on 12/06/19 Friday by ts

对不起，此内容只适用于日本語。

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SSDM 2019

Posted on 09/06/19 Friday by ts
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A paper accepted for presentation in WiPDA2019

Posted on 09/02/19 Monday by ts

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DA symposium 2019

Posted on 09/01/19 Sunday by ts
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(日本語) SSDM2019採択決定

Posted on 06/27/19 Thursday by ts

对不起，此内容只适用于English和日本語。

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(日本語) ICMTS2019

Posted on 04/02/19 Tuesday by ts
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