Tag Archives: device model

IEEE Trans. Semicond. Manufact.: paper accepted

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300

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(日本語) Japanese Journal of Applied Physicsへの論文採録決定

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SSDM 2019

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A paper accepted for presentation in WiPDA2019

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DA symposium 2019

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SSDM 2019: paper accepted

The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading

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ICMTS2019

Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading

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(日本語) 英文論文誌Nonlinear Theory and Its Applications, IEICE (NOLTA)への論文掲載

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IPEC2018

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