Tag Archives: device model

IEEE Kansai Chapter MFSK Award

Posted on Thursday December 3rd, 2020 by ts
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WiPDA2020

Posted on Tuesday October 27th, 2020 by ts
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IEEE Trans. Semicond. Manufact.: paper accepted

Posted on Wednesday April 15th, 2020 by ts

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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing

Posted on Wednesday February 26th, 2020 by ts

Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300

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(日本語) Japanese Journal of Applied Physicsへの論文採録決定

Posted on Friday December 6th, 2019 by ts

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SSDM 2019

Posted on Friday September 6th, 2019 by ts
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A paper accepted for presentation in WiPDA2019

Posted on Monday September 2nd, 2019 by ts

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DA symposium 2019

Posted on Sunday September 1st, 2019 by ts
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SSDM 2019: paper accepted

Posted on Thursday June 27th, 2019 by ts

The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading →

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ICMTS2019

Posted on Tuesday April 2nd, 2019 by ts

Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading →

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