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- ▼2021 (2)
- ▼January (2)
- Japanese Journal of Applied Physicsへの論文採録決定Paper accepted for publication in Japanese Journal of Applied PhysicsPaper accepted for publication in Japanese Journal of Applied Physics
- Japanese Journal of Applied Physicsへの論文採録決定Paper accepted for publication in Japanese Journal of Applied PhysicsPaper accepted for publication in Japanese Journal of Applied Physics
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Tag Archives: device model
IEEE Kansai Chapter MFSK Award
Posted in Award
Tagged device model, electron device society, IEEE, organic
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WiPDA2020
Posted in Conference/Workshop
Tagged device model, high temperature, power electronics, SiC MOSFET
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IEEE Trans. Semicond. Manufact.: paper accepted
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged device model, IEEE, Journal, organic
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A paper accepted for publication in IEEE Transactions on Semiconductor Manufacturing
Hiroki Tsukamoto, Michihiro Shintani and Takashi Sato: “Statistical Extraction of Normally and Lognormally Distributed Model Parameters for Power MOSFETs,” IEEE Transactions on Semiconductor Manufacturing, (to appear). DOI: 10.1109/TSM.2020.2975300
Posted in Publication
Tagged device model, IEEE, Journal, power electronics
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(日本語) Japanese Journal of Applied Physicsへの論文採録決定
Sorry, this entry is only available in 日本語.
Posted in Publication
Tagged device model, Journal, JSAP, organic, reliability
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A paper accepted for presentation in WiPDA2019
Sorry, this entry is only available in 日本語.
Posted in Conference/Workshop
Tagged device model, IEEE, power electronics
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DA symposium 2019
Posted in Conference/Workshop
Tagged DAS, device model, IPSJ, organic
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SSDM 2019: paper accepted
The following paper has been accepted as an oral presentation in International Conference on Solid State Devices and Materials (SSDM) 2019. Kunihiro Oshima, Michiaki Saito, Michihiro Shintani, Kazunori Kuribara, Yasuhiro Ogasahara, and Takashi Sato, “Experimental study of bias stress degradation … Continue reading
Posted in Conference/Workshop
Tagged device model, JSAP, organic, reliability, SSDM
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ICMTS2019
Two students, Tsukamoto and Saito, presented papers in the 32nd IEEE International Conference on Microelectronic Test Structure (ICMTS) 2019, at the International conference center in Kitakyushu, which was held during March 18-21, 2019. Hiroki Tsukamoto, Michihiro Shintani, and Takashi Sato, … Continue reading
Posted in Conference/Workshop
Tagged device model, ICMTS, IEEE, organic, power electronics, reliability
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