SSDM 2019

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(日本語) DAシンポジウム2018優秀発表学生賞・デザインガイア2018優秀発表学生賞

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A paper accepted for presentation in ASPDAC2020

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A paper accepted for presentation in WiPDA2019

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DA symposium 2019

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(日本語) 第31回 回路とシステムワークショップ 奨励賞 受賞

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(日本語) 第32回回路とシステムワークショップ@東京電機大学

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A paper accepted, Integration, the VLSI Journal

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FLEPS2019

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A paper accepted for ICSCRM2019 in Kyoto

The following paper has been accepted as an oral presentation in International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019.

  • Michihiro Shintani, Kazuki Oishi, and Takashi Sato, “A three-level active gate drive circuit for power MOSFETs utilizing a generic gate driver IC,” in Proc. International Conference on Silicon Carbide and Related Materials (ICSCRM), (to appear)
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