Paper accepted for publication in IEEE Transactions on Power Electronics

The following paper has been accepted for publication in IEEE Transactions on Power Electronics (TPEL).

  • Michihiro Shintani, Yohei Nakamura, Kazuki Oishi, Masayuki Hiromoto, Takashi Hikihara, and Takashi Sato:
    “Surface-Potential-Based Silicon Carbide Power MOSFET Model for Circuit Simulation,” IEEE Transactions on Power Electronics, (to appear).
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