Dr. Shintani and Mr. Zhou presented their papers at International Symposium on Nonlinear Theory and Its Applications (NOLTA 2016) held in Yugawara, Japan.
Dr. Shintani’s talk was on the gate driver without its switching loss. As switching frequency increases, the size of power converters can be reduced. On the other hand, switching loss of the gate driver becomes a big issue. In this work, we proposed a gate driver using soft-switching technique based on class-E amplifier. We demonstrated the proposed gate driver achieve no switching loss and target power MOSFET is successfully switched. This work is a collaborative work with Hiroo Sekiya Laboratory, Chiba University.
Mr. Zhou’s talk was about a circuit simulation model for SiC power MOSFET. Accurate transistor model is the key component in designing efficient power converters. Its importance is increasing as the operating frequency of the converters become higher. A transistor model that accurately and compactly represents physical device behavior is required. In this paper, we propose a charge-based transistor model that includes parasitic resistances of vertical diffused SiC power MOSFET. Through experiments using a commercial device, good agreement has been observed between measurement and simulation in I-V, C-V, and transient characteristics.
- Michihiro Shintani, Yuchong Sun, Hiroo Sekiya, and Takashi Sato:
“A Design Example of Class-E Based Gate Driver for High Frequency Operation of SiC Power MOSFET,” in Proc. of International Symposium on Nonlinear Theory and Its Applications (NOLTA), p.181, Nov. 2016.
- Rui Zhou, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
“A Charge-Based SiC Power MOSFET Model Considering On-State Resistance,” in Proc. of International Symposium on Nonlinear Theory and Its Applications (NOLTA), pp.177-180, Nov. 2016.