NOLTA2016: papers accepted

The following papers have been accepted for presentation in International Symposium on Nonlinear Theory and Its Applications (NOLTA). The symposium will be held in November 27-30, 2016 in Yugawara, Japan.

  • Rui Zhou, Michihiro Shintani, Masayuki Hiromoto, and Takashi Sato:
    “A Charge-Based SiC Power MOSFET Model Considering On-State Resistance,” in Proc. of International Symposium on Nonlinear Theory and Its Applications (NOLTA) (Yugawara, Japan), Nov. 2016 (to appear).
  • Michihiro Shintani, Yuchong Sun, Hiroo Sekiya, and Takashi Sato:
    “A Design Example of Class-E Based Gate Driver for High Frequency Operation of SiC Power MOSFET,” in Proc. of International Symposium on Nonlinear Theory and Its Applications (NOLTA) (Yugawara, Japan), Nov. 2016 (to appear).
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