Daily Archives: Monday October 3rd, 2016

SSDM2016

Posted on Monday October 3rd, 2016 by hiromoto

Dr. Shintani presented his paper at International Conference on Solid State Devices and Materials (SSDM) held in Tsukuba, Japan. Dr. Shintani’s talk was about a circuit simulation model for SiC power MOSFET. Circuit simulation models standarized in the industry assume … Continue reading →

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