Daily Archives: Tuesday September 13th, 2016

Dr. Shintani presented his paper at the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) held in Nuremberg, Germany. SISPAD has provided an international forum for the presentation of leading-edge research and development results in the area of … Continue reading →

The following papers have been accepted for presentation in WiPDA (the 4th IEEE Workshop on Wide Bandgap Power Devices and Applications). Michihiro Shintani, Kazuki Oishi, Rui Zhou, Masayuki Hiromoto, and Takashi Sato: “A Circuit Simulation Model for V-Groove SiC Power … Continue reading →